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 Zeng, Z.Garoufalis, C.S.Baskoutas, S. Terzis, A.F. 

Phys. Letters A, Volume 376, Issues 42–43, Pages 2712–2716

Abstract

We theoretically investigated the donor binding energy distribution with respect to the dopant positions in a self-assembled GaAs/AlGaAs quantum dot (QD) in the presence of a tilted electric field. It is found that there is a critical line in a doping plane, corresponding to zero Stark shift of the donor binding energy. At low electric fields, our work reveals that Stark shift of an on-center donor binding energy is a "purely" quadratic function of the electric field strength, irrespective of QD dimensions and field orientations. This scaling law permits us to indirectly estimate the impurity polarizability in a self-assembled QD. © 2012 Elsevier B.V. All rights reserved.

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