Contact Information

Email: This email address is being protected from spambots. You need JavaScript enabled to view it.      Tel. +30 2610 969349


Latest Articles

 Zeng, Z.Garoufalis, C.S.Baskoutas, S. Terzis, A.F. 

Phys. Letters A, Volume 376, Issues 42–43, Pages 2712–2716


We theoretically investigated the donor binding energy distribution with respect to the dopant positions in a self-assembled GaAs/AlGaAs quantum dot (QD) in the presence of a tilted electric field. It is found that there is a critical line in a doping plane, corresponding to zero Stark shift of the donor binding energy. At low electric fields, our work reveals that Stark shift of an on-center donor binding energy is a "purely" quadratic function of the electric field strength, irrespective of QD dimensions and field orientations. This scaling law permits us to indirectly estimate the impurity polarizability in a self-assembled QD. © 2012 Elsevier B.V. All rights reserved.

You are here: Home Uncategorised Stark effect of donor binding energy in a self-assembled GaAs quantum dot subjected to a tilted electric field